MAGNETORESISTIVE THRESHOLD NANOELEMENT Russian patent published in 2009 - IPC H01L43/08 B82B1/00 

FIELD: physics.

SUBSTANCE: invention can be used in magnetic field and current sensors, memory and logic devices, galvanic decouplers based on a multilayer nanostructure with magnetoresistive effect. In the magnetoresistive threshold nanoelement, which has a substrate on which there is first insulating layer on which there is a pointed multilayer magnetoresistive strip which has a first protective layer, first magnetically soft film with easy magnetic axis directed along the longer side of the pointed multilayer magnetoresistive strip, a separating non-magnetic layer on top of the first magnetically soft film, on which there is a second magnetically soft film with easy magnetic axis directed along the longer side of the pointed multilayer magnetoresistive strip, and a second protective layer on top of which there is a second insulating layer on which a control conductor is deposited, the working part of which lies across the longer side of the pointed multilayer magnetoresistive strip, and a third insulating layer between the second magnetically soft film and the second protective layer, there is semiconductor layer. Thickness of the separating non-magnetic layer is sufficient for preventing exchange interaction between the first and second magnetically soft films.

EFFECT: design of a magnetoresistive threshold nanoelement based on a magneto-semiconductor nanostructure with planar flow of sensor current, which works on a novel operating principle at small magnetic fields and has low control current.

2 cl, 5 dwg