METHOD OF OBTAINING HIGH PURITY SILICON Russian patent published in 2013 - IPC C01B33/23 C01B33/27 C01B33/37 B82B3/00 B82Y30/00 

FIELD: chemistry.

SUBSTANCE: invention relates to production of high purity silicon in form of nano-size powder, which can be applied in semiconductor electronics and in nanotechnologies. Method includes synthesis of gaseous silicon monoxide through reaction of silicon dioxide with silicon and following reduction of silicon monoxide to free silicon, and synthesis of gaseous silicon monoxide is carried out at temperature lower than fusion point of silicon, gaseous silicon dioxide is condensed at temperature 400-600°C, and reduction of silicon monoxide to free silicon is carried out by annealing at temperature 950-1200°C for 2-3 hours with the following separation of silicon nanoparticles. Separation of silicon nanoparticles is carried out by etching in solution of hydrofluoric acid with following washing and drying. Regulation of sizes of silicon nanoparticles and their structure is realised by changing conditions of silicon monoxide annealing.

EFFECT: invention makes it possible to obtain silicon with particle size less than 50 nm and purity 99,999%.

3 cl, 1 tbl, 1 ex