FIELD: chemistry.
SUBSTANCE: method for preparation of high-purity silicon lies in silicon dioxide reduction to silicon monooxide under the action of arc-jet plasma in the hydrogen atmosphere with following reduction of the obtained silicon monooxide to elemental silicon under the action of arc-jet plasma with hydrogen and methane gas mixture. The invention allows to obtain the silicon with admixtures content less than 1*10-3% wt including carbon content less 1*10-4% wt.
EFFECT: decrease of admixtures content.
1 ex, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PRODUCING HIGH PURITY SILICON | 2006 |
|
RU2327639C2 |
| METHOD OF DIRECT OBTAINING OF POLYCRYSTALLINE SILICON FROM NATURAL QUARTZ AND FROM ITS HIGHLY PURE CONCENTRATES | 2012 |
|
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| METHOD OF OBTAINING HIGH PURITY SILICON | 2012 |
|
RU2497753C1 |
| METHOD FOR PRODUCTION OF MULTI- AND MONOCRYSTALLINE SILICON | 1999 |
|
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| METHOD OF PRODUCTION OF HIGH PURITY CRYSTAL SILICON (VERSIONS) | 2008 |
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| METHOD FOR PREPARING SILICON | 2013 |
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| METHOD OF PRODUCING HIGH-PURITY SILICON PELLETS | 2011 |
|
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| METHOD FOR PRODUCTION OF HIGH-PURITY POLYCRYSTALLINE SILICON | 1993 |
|
RU2078034C1 |
| METHOD OF OBTAINING HIGH-PURITY SILICON | 2010 |
|
RU2435731C1 |
