METHOD FOR OBTAINING GAS-SENSITIVE ELEMENT BASED ON MULTI-LAYERED STRUCTURE OF POROUS SILICON ON THE INSULATOR AND SnO Russian patent published in 2018 - IPC H01L21/316 G01N27/12 

FIELD: electrical engineering.

SUBSTANCE: invention relates to semiconductor technology and can be used in the process of obtaining materials with high gas sensitivity and small size for the manufacture of gas sensors. Method of producing the gas sensitive element based on a multilayer structure of porous silicon on an insulator and SnO_x includes two-step anodic etching of a silicon wafer, oxidation of the resulting bilayer structure by high-temperature annealing in oxygen vapor followed by application of a SnO_x film vapor deposition method. Before the stage of high-temperature annealing, the bilayer structure is oxidized in the electrolyte of the composition HCl:H₂O 1:7 at the current density of 20 mA/cm² for 5 minutes, and the resulting multilayer structure with the deposited film of SnO_x is subjected to thermal annealing at the temperature of 350–450 °C for 60 minutes in the air.

EFFECT: technical result of the invention is to increase the sensitivity of the gas sensitive element to NO₂ at room temperature.

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