FIELD: electricity.
SUBSTANCE: method for manufacturing of a multilayer structure of porous silicon-on-insulator includes anode etching of a wafer of single-crystal silicone of the p-type, which is performed in two stages. At the first stage of anode etching a layer of macroporous silicon is formed, at the second stage a layer of mesoporous silicon is formed under the layer of macroporous silicon, then drying in vacuum and high-temperature annealing is performed.
EFFECT: manufacturing of the multilayer structure of porous silicon-on-insulator with advantages of a developed surface and insulation from a silicone substrate, reduced temperature of the structure annealing.
6 cl, 4 dwg
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