CANAL MATRIX AND METHOD OF ITS PRODUCTION Russian patent published in 2014 - IPC H01L21/3063 B82B1/00 

Abstract RU 2516612 C1

FIELD: chemistry.

SUBSTANCE: in canal matrix in addition to plate of monocrystalline silicon of hole type with opened canals and deposited material on frontal surface of this plate intermediate dielectric layer of silicon dioxide is created and metal film is applied on the frontal surface of plate with opened canals which have specified diametrical dimension.

EFFECT: improvement of exploitation characteristics by introduction of electrodes and application of electrokinetic and electrophysiological control, which makes it possible to extend nomenclature of membrane equipment products based on biocompatible and highly technological silicon.

8 cl, 8 dwg

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RU 2 516 612 C1

Authors

Romanov Sergej Ivanovich

Filippov Nikolaj Stepanovich

Parashchenko Maksim Aleksandrovich

Dates

2014-05-20Published

2012-11-01Filed