FIELD: electricity.
SUBSTANCE: in high-voltage diode on the basis of 6H silicon carbide, which consists of low-alloyed initial wafer n-6HSiC and has additionally alloyed p+- and n+- areas, the diode base is material of silicon carbide of 6H polytype, and method used for preparation of additionally alloyed areas is ion implantation. Necessary parameters of p-n transition are achieved by control of dose value and concentration of implanted ions with account of silicon carbide peculiarities, and also modes of post-implantation annealing.
EFFECT: expansion of parameters of silicon carbide diode applicability in comparison with similar silicon and GaAs diodes and increase of reliability in comparison with silicon carbide Schottky diodes.
1 dwg
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