FIELD: electricity.
SUBSTANCE: method to make a high voltage silicon-carbide diode based on ion-doped p-n-structures involves coating of a heavily doped substrate 6H-SiC with low-doped epitaxial layer 10÷15 mcm thick by chemical deposition from gas phase, afterwards the said layer is subject to ion-implantation by acceptor impurity A1 or V with the energy of 80÷100 keV and dose of 5000÷7000 microcoulomb/cm2, that allows for maximal increase of the width of space charge region of a p-n-junction (w~10 mcm) at which no inversion of charge carriers occurs in the near-surface layer, the value of breakdown voltage of the p-n-junction reaches ~1200 V.
EFFECT: production of a high voltage silicon-carbide diode based on ion-doped p-n-structures.
1 dwg
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