SILICON CARBIDE: MATERIAL FOR RADIOISOTOPE ENERGY SOURCE Russian patent published in 2020 - IPC C30B29/36 C30B31/06 G21H1/02 

FIELD: chemistry.

SUBSTANCE: invention relates to semiconductor structures of silicon carbide. Silicon carbide: material for a radioisotope energy source, which contains a monocrystalline phase of a silicon carbide semiconductor structure in the form of a film having n- and p-type conductivity for separating electron-hole pairs, includes in the silicon carbide molecular structure elements: carbon isotope C¹² and additionally C¹⁴ for conversion of its radiation energy into electrical energy, wherein concentration of radioisotope C¹⁴ in one of layers of n- or p-type conductivity is from 5⋅10¹⁷ to 10²⁰ cm^-3. Layer of n- or p-type silicon carbide layer can be formed on surface of monocrystalline silicon substrate. Layer of silicon carbide with C¹⁴ n- or p-type conductivity has porous surface morphology.

EFFECT: invention provides minimization of radioisotope C¹⁴ consumption in the substance of the semiconductor structure, which determines the technical and economic efficiency and radiation safety of the substance application in semiconductor energy conversion devices.

3 cl, 6 ex, 5 dwg