ELECTRICAL SEMICONDUCTOR SURFACE PASSIVATION METHOD Russian patent published in 2008 - IPC H01L21/312 

FIELD: physics.

SUBSTANCE: electrical semiconductor surface passivation method involves preparation of the surface of the semiconductor for passivation, intermediate passivation, providing for conditions for precipitation of the passivating monolayer, and depositing of a 1-alkene monolayer, particularly 1-octadecene. The depositing process is carried out during photo-stimulation or thermal stimulation in a mode, providing for charge in the monolayer of less than 10¹¹ cm^-2, or the final thermal treatment is carried out, which reduces the charge value, leading to surface curving of the zone. Without final thermal treatment, photo-stimulation is carried out for 1.5÷2.5 hours at 265 nm wavelength, with 18 W/cm² power and distance from the ultraviolet source to the substrate between 2 cm and 4 cm. Thermal stimulation is carried out for 12÷18 hours at 150÷170°C, with final thermal treatment for 1÷5 hours at 265 nm wavelength, 18 W/cm² power and distance from the ultraviolet source to the substrate between 1 cm and 10 cm, and for 6-18 hours at 110÷180°C respectively. Final thermal treatment is carried out at 180÷260°C for 10÷30 minutes. Intermediate passivation is carried out using hydrogen or using hydrogen first and then iodine or bromine or fluorine.

EFFECT: stability of the effect; improved properties.

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