METHOD FOR FORMING A HYBRID DIELECTRIC COATING ON THE SURFACE OF INDIUM ANTIMONIDE ORIENTATION (100) Russian patent published in 2022 - IPC H01L31/18 

FIELD: materials science.

SUBSTANCE: invention relates to the field of materials science, in particular to the field of formation of dielectric coatings on the surface of indium antimonide (InSb) orientation (100) n-type conductivity, and can be used in the manufacture of semiconductor devices. The effect is achieved due to the fact that an additional layer of SiO₂, formed by chemical vapor deposition, is added to the structure of the InSb substrate/anodic oxide (with preliminary sulfiding in solution) under the following modes: time, min, 5, deposition rate, nm/min .40; substrate holder temperature, °C, 135-150°C; RF power, W, 20; main and working pressure in the chamber, mTorr, 1228; SiH₄/Ar (5%) 170; N₂O 710.

EFFECT: creation of the SiO₂/anodic oxide/InSb substrate structure, which has a high degree of mechanical and chemical protection, a low surface roughness (Ra 3 nm) and a fixed charge value N_F 1×10¹² cm^-2.

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