METHOD OF MAKING PHOTODIODE ARRAY Russian patent published in 2025 - IPC H10F71/00 

FIELD: electric elements.

SUBSTANCE: invention relates to the technology of making semiconductor devices which are sensitive to infrared radiation. Method of making a photodiode array according to the invention involves preparing the surface of an initial n-type indium antimonide plate, formation of doped regions of p-type conductivity, post-implantation annealing, application of dielectric layer of ZnS with thickness of 100-500 nm, wherein after post-implantation annealing, removing the native oxide layer of the n-type indium antimonide plate in a diluted solution of 1:10 concentrated hydrofluoric acid, mesa-elements are formed using a sequence of actions including formation of a photoresist mask with a given topology, chemical etching and an operation of "opening windows" by "explosive" photolithography.

EFFECT: invention enables to create a matrix photosensitive element with improved uniformity of distribution of density of states at the dielectric-semiconductor interface and fewer process operations.

1 cl, 1 dwg