METHOD FOR MANUFACTURING A MATRIX PHOTODETECTOR Russian patent published in 2023 - IPC H01L31/18 

FIELD: production of semiconductor devices.

SUBSTANCE: production of semiconductor devices sensitive to infrared radiation, in particular single- and multi-element photodiodes based on indium antimonide (InSb), used in the production of linear and matrix photodiodes. A method for manufacturing a matrix photodetector includes the processes of forming a local р-n junction on an indium antimonide substrate by implanting beryllium ions with post-implantation annealing, forming a protective dielectric film, forming a contact system, while the process of forming a protective dielectric film is carried out as follows: the oxide layer is first removed in a dilute solution of hydrofluoric acid in deionized water, form a protective dielectric film 10 nm thick by atomic layer deposition: 100 cycles of alternating supply of trimethylaluminum and water vapor, opening is carried out in the dielectric layer in a buffer etchant based on hydrofluoric acid and ammonium fluoride.

EFFECT: resulting dielectric coating has improved uniformity over the plate area in comparison with the hybrid coating used in serial production: a smaller spread of Dit values over the plate area: for a sample with a dielectric coating formed by the ALD method, it does not exceed 9% versus 20% on the sample, with a hybrid coating.

1 cl, 4 dwg