INJECTION LASER Russian patent published in 2007 - IPC H01S5/30 

FIELD: quantum electronic engineering; semiconductor injection lasers of high radiation power intensity.

SUBSTANCE: proposed injection laser built around semiconductor material A^IIIB^V and its solid solutions with interference coating on at least one optical face incorporating intermediate layer and zinc selenide epitaxial film has intermediate layer of three sublayers of which intermediate one is sulfur monolayer. Sublayer of sulfur-doped optical-face semiconductor material abuts against the latter on optical face side. Variable-composition sublayer of ZnSe_xS_{1 - x} abuts against it on zinc selenide side, where x varies between 0.9 and below 1.0. Such design of injection laser ensures enhanced lasing stability of mirrors and optical transparence of optical-face surface layer.

EFFECT: enhanced output radiation power and its stability in single-mode and multimode operation, enhanced temperature stability, reliability, and service life of laser.

1 cl, 3 dwg