FIELD: physics; measuring.
SUBSTANCE: method concerns to non-destroying quality monitoring of a state of a material and can be used for ultraprecise measurings and examination of materials at low temperatures. The method of determination of temperature of occurrence of a tunnel effect in dielectrics and insulants includes the sample of a material place between electrodes of the device and thermostatically control at the temperature which is not exceeding temperature of fusion, then to the sample put an electric field and yield polarisation during time, which is more than a relaxation time at the given temperature after that, not disconnecting an electric field, yield cooling to temperature at which thermoactivation processes in a material practically stop, then a field disconnect and carry out the linear heating of the sample with constant velocity of a heating to temperature above polarisation temperature, measure thermally stimulated depolarisation currents (TSDC) and in the presence of the low-temperature maximum №1 TSDC judge tunnel effect presence in the sample, remove a spectrum of a tangent of a dielectric loss angle tgδ (f,T) for not polarised sample, at various frequencies and the fixed temperature, thus temperature of occurrence of a tunnel effect in the sample spot on temperature, at which bias of maximums of spectrum tgδ(f,T) to low frequencies stops at change of temperature of a material.
EFFECT: determination of temperature of occurrence of a tunnel effect on character of bias of maximums a of spectrum tgδ(f,T) at low temperatures in dielectrics and insulants.
6 dwg
