FIELD: nanotechnologies.
SUBSTANCE: invention relates to nanotechnology. Method for obtaining n- and p-types of proton semiconductors comprises determining the type of defects, their quantity and activation energy by measuring thermally stimulated depolarisation currents and specific electric conductivity, which creates an excessive concentration of protons and proton defects when doping crystalline materials with acids of the type HCl, HI, HF (with predominant H+and H3O+ conductivity, i.e. p-type) or alkali of the type NH4OH (with predominant OH- conductivity, i.e., n-type) and determining the type, concentration and magnitude of the activation energy of relaxers for a wider range of crystalline materials, for which a sample is temperature-controlled at a certain temperature, not exceeding the melting point, the polarised object is cooled without switching off the electric field Ep up to To=77 K and the polarised state is "frozen". Electric field is then turned off, the sample is closed to the measuring device and the heterocharge breaks down under heating, i.e., the appearance of thermally stimulated depolarisation currents, consisting in the appearance of relaxation maxima, the magnitude and displacement of which on the temperature scale makes it possible to determine the type of semiconductor, the concentration of n- and p-types of charge carriers and their activation energy. Comprehensive investigations carried out have shown the nature and mechanism of dielectric relaxation, transport and tunneling of protons through the nanostructure of a number of crystals with hydrogen bonds at low temperatures, where it is shown that pure proton conduction, similar to electron conduction, does not exist. There is a strong correlation between transport due to hopping diffusion of protons through both thermal activation and tunneling transitions through the crystal lattice and changes in the orientation of the protonated anions HSiO43- (silicates), HSO4- (sulphates) or HIO3 (iodates).
EFFECT: wide range of operating temperatures of solid conductors and semiconductors of n- and p-types enables their use as a working body of hydrogen sensors and its isotopes, determines the potential for their practical use at nuclear facilities in solving problems of ensuring explosion safety.
1 cl, 6 dwg, 4 tbl
