FIELD: physics.
SUBSTANCE: present invention can be used in designing new insulating materials, as well as crystals, used in optoelectronics and laser technology, on a micro-molecular level, which is important when designing new nanotechnologies. The method of obtaining proton conductivity in crystals and electrically insulating materials involves determining the type of defects, their number and activation energy by measuring thermally insulated depolarisation current and electric conductivity. Temperature of a sample is kept at a certain temperature which does not exceed its melting temperature. A power source and a recording device are then connected and current drop with time is recorded. Electric conductivity γ, is determined from residual current. Using expressions lnγ=f(103/T) and lnγ=f(ν), it can be established that, proton conductivity is present when protons move between layers of the crystal lattice due to realignment of protonated anions (for example, HSO4, HSiO4, HIO3 and others), which is expressed by increase in electrical conductivity when frequency increases, when proton conductivity dominates over ion conductivity, which is determined from measuring electrical conductivity of a pure material and material doped with proton-donors (for example, HCl, HI, HF and others), resulting in increased concentration of orientation defects H3O+ and OH-, which migrate in opposite directions due to migration of protons on hydrogen bonds.
EFFECT: method allows for producing material with given conductivity due to enrichment of materials with protons.
10 dwg
