FIELD: physics, semiconductors.
SUBSTANCE: invention is designed to be used in analysing physical and chemical properties of semiconductors, dielectrics and insulating materials. The proposed device allows analysing such properties of the said materials as dielectric loss complex dielectric coefficient, resistance and specific conductivity, capacitance, electric field strength, depolarisation and polarisation thermally-stimulated currents. The proposed device comprises a steel base, equal-weight electrodes. The lower electrode has inner spaces. Note that lead-in represents a fused quartz plate. The lower hollow electrode incorporates a replaceable ultrasound converter to generate ultrasound vibrations in a specimen. The upper electrode is pressed against the specimen fitted on the lower electrode with the help of a thin plate spring and fused quartz plate. Note that the vacuum screen cup (chamber) has two openings to irradiate the specimen and to register its radiation.
EFFECT: measurement of physical and chemical properties of semiconductors, dielectrics and insulating materials under effects of electric fields, ultrasound vibrations and electromagnetic radiation in wide range of temperatures and frequencies.
5 dwg
