FIELD: nanotechnologies.
SUBSTANCE: invention relates to nanotechnologies, particularly, to the methods of producing ordered nanostructures on the surface and inside high bandgap semiconductors and dielectrics in highly dissipative nonlinear dynamic systems. The proposed method consists in concentration of linearly polarised ultra-fast laser radiation at the area of processing a specimen through its polished surface, selection of laser radiation power density proceeding from the condition of exceeding the critical concentration of non-equilibrium electrons (n) in the conductance band. Note here that the critical concentration of non-equilibrium electrons and laser radiation pulse duration are defined by using certain ratios.
EFFECT: simple and reliable production of reproducible nanostructures.
2 dwg
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