FIELD: electronics. SUBSTANCE: invention relates to technology of manufacture of semiconductor devices. Metallization of electrodes (source, drain and gate) is conducted by chemical selective precipitation from solution through photoresistive contact mask. Coating made of amorphous refractory nickel-palladium-phosphorus alloy which is precipitated from nickel- palladium bath at temperature 96-99 C and pH 9.0-10.0 is used as material of gate. EFFECT: facilitated manufacture.
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