METHOD TO MANUFACTURE MICROWAVE FIELD TRANSISTOR WITH SCHOTTKY BARRIER Russian patent published in 2012 - IPC H01L21/338 

FIELD: electricity.

SUBSTANCE: method to manufacture a microwave field transistor with a Schottky barrier includes manufacturing on a front surface of a half-insulating substrate with an active layer of at least one pair of source and drain electrodes with a channel between them, a groove in the channel for a gate electrode, a gate electrode of Schottky barrier type asymmetrically arranged towards the source electrode. Prior to making a groove for a gate electrode an additional dielectric layer is applied onto the active layer of the half-insulating substrate with thickness of 0.1-0.5 mcm, the additional dielectric layer is confined in the form of a step by means of processes of electronic or photographic lithography and subsequent plasma-chemical etching, and when making a gate electrode, an electronic or a photoresistive mask is formed with the window length of 0.5-0.9 mcm, with thickness of 0.7-1.2 mcm and with shift of 0.3-0.6 mcm on the surface of the additional dielectric layer relative to the end of its step, providing for a gap between the specified end and the upper edge of the mask at the side of the drain electrode, and the angle in sputtering of a metal or a system of metals forming a Schottky barrier in the gate area represents an angle between the face surface of the half-insulating substrate and a vector of the flow of the sputtered metal or a system of metals with the value equal to (70-90)°, at the same time the gate electrode length is set on the basis of proposed conditions.

EFFECT: increased output capacity, amplification ratio by capacity, efficiency of a transistor with preservation of its reliability and expansion of functional capabilities.

6 cl, 2 dwg