FIELD: electricity.
SUBSTANCE: electrodes forming rectifying contacts with material are arranged on surface or in the volume of non-degenerate or weakly degenerate semiconductor material. With that, distance between electrodes (D) is chosen so that it is considerably smaller than depth of penetration into material of electric field (L), (D<<L), which is caused by contact difference of potentials. Minimum distance between electrodes is DMIN=20 nanometres, and maximum distance between electrodes is DMAX=30 micrometres. Before, after or during formation of electrodes, to the material there introduced are electronic-vibration centres (EVC) in concentration of (N) of 2·1012 cm-3 to 6·1017 cm-3. Material temperature is brought to temperature of hyperconducting junction (Th) or to higher temperature.
EFFECT: possibility of implementing an effect of hyperconductivity and ultra-heat conductivity at temperatures close to and higher than room temperature.
13 cl, 26 dwg
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Authors
Dates
2013-10-27—Published
2009-05-26—Filed