SEMICONDUCTOR HETEROEPITAXIAL STRUCTURE WITH HIGH LIFE TIME Russian patent published in 1995 - IPC

FIELD: semiconductor devices. SUBSTANCE: semiconductor heteroepitaxial structure is positioned on semiconductor monocrystalline substrate with heteroepitaxial layer of n-type and disturbed layer on separation boundary. Heteroepitaxial layer has n⁺ layers. First one with thickness equal to that of disturbed layer is located on boundary of separation with substrate, second one is manufactured tunnel-opaque for minority carriers and is placed at distance bigger than length of Debye screening from first layer. Heteroepitaxial layer is supplemented with high-doped p⁺ layer which thickness is bigger doubled length of Debye screening and which is arranged between first and second high-doped layers. EFFECT: enhanced operational stability. 2 dwg