FIELD: electricity.
SUBSTANCE: nondegenerate or weakly degenerate semiconductor material is used, electrodes 1 and 2 forming rectifying contacts with the material, such as metal-semiconductor contacts, Schottky contacts are placed on its surface or in its volume. The distance between the electrodes D is chosen to be no more than 4Λ, D≤4Λ, where Λ is the coherence length; the size of the electrode contact area with material a is chosen not more than a quarter of the length of the elastic wave in the material a≤λ/4, λ=V/F, where V is the velocity of the elastic wave in the material with a frequency F = 108 Hz; an aligned electromagnetic coupling of the material part is established and maintained, the part is adjacent to the electrode 1 and/or adjacent to the electrode 2 or a material or a part of the material is located between the electrodes 1 and 2 with high frequency (HF) and (or) super high-frequency (SHF) decelerating device such as a coaxial line, a waveguide line, a strip line, a resonator, an oscillatory circuit that are characterized by resonance frequencies f in the range 106 Hz to 3⋅1015 Hz and figures of merit Q≥10; the material is heated to a T temperature equal or higher than the temperature of the hyperconducting transition Th, Th≤T≤T*; the electrical and/or thermal resistance of the material between the electrodes and (or) the Meissner effect is measured; as a result, the electrical resistance and the thermal resistance of the material between the electrodes go to zero, that is, the hyperconductivity and superconductivity in the material between the electrodes 1 and 2 are realized, and the Meissner effect is enhanced.
EFFECT: ensuring the possibility of efficiency increase.
21 cl, 47 dwg
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Authors
Dates
2017-07-24—Published
2016-04-26—Filed