TUNNEL FIELD-EFFECT NANOTRANSISTOR WITH INSULATED GATE Russian patent published in 2009 - IPC H01L29/36 

FIELD: electricity.

SUBSTANCE: proposed invention relates to a tunnel field-effect nanotransistor with an insulated gate, with efficient control of tunnel electric current, flowing between two metallic or heavily doped semiconductor electrodes, separated by a dielectric layer which is tunnel-transparent to electrons, with application of bias voltage between the electrodes. Flow of charge carriers is controlled by applying bias voltage to the gate electrode over the region where tunnel current flows and the dielectric layer, separated from the source and drain electrodes, with thickness which is comparable with the thickness of the tunnel barrier. The gate electrode is made in form of a heavily doped semiconductor with opposite type of conduction to the material of the source and drain.

EFFECT: when bias voltage is applied to an electrode, no detectable current flows between this electrode and the source and drain electrodes; the gate of the nanotransistor is insulated.

1 dwg