PSEUDOMORPHIC HETEROINTERFACE MODULATION-DOPED FIELD-EFFECT TRANSISTOR Russian patent published in 2014 - IPC H01L29/772 B82B1/00 

FIELD: electricity.

SUBSTANCE: pseudomorphic heterointerface modulation-doped field-effect transistor comprises a flange, a pedestal, heteroepitaxial structure, a buffer layer, the source, gate and drain and ohmic contacts. The pedestal has thickness equal at least to 150 mcm; it is made of a heat conductive layer of CVD polycrystalline diamond Ni implanted and annealed. On top of the pedestal there is a motherboard of GaAs, a buffer layer, heteroepitaxial structure based on GaAs/AlGaAs/InGaAs, and at the surface of heteroepitaxial structure between the source, gate and drain there are additional in-series layers of heat-conductive polycrystalline diamond, a barrier layer of hafnium dioxide and an additional barrier layer of metal oxide, at that barrier layers have total thickness of 1.0-4.0 nm. In the gate area the barrier layers are offset under the gate, directly at epitaxial structure, as GaAs gradient layer with n-conductivity.

EFFECT: increasing heat removal from the pedestal and active area of the transistor, minimising the gate current losses and attaining the least noise coefficient in GHz range of frequencies.

5 cl, 5 dwg, 2 tbl