TUNNEL UNALLOYED MULTI-SHEAR FIELD NANOTRANSISTOR WITH CONTACTS OF SCHOTTKY Russian patent published in 2017 - IPC H01L29/78 

FIELD: electricity.

SUBSTANCE: design of a tunnel unalloyed multi-gate field nanotransistor with Schottky contacts is proposed, characterized in that two or more gate control electrodes are located in series on the surface of the gate dielectric layer in the section above the nanotransistor channel between the drain and source electrodes. The lateral surfaces of the gate control electrodes are covered by dielectric spacer layers, the semiconductor layer is not alloyed either under the drain and source electrodes, or in the channel of the nanotransistor in the section between the drain and source electrodes, and the necessary modes of operation of the nanotransistor are provided by using the tunneling effect and the appropriate choice of drain electrode materials, source and gate control electrodes, as well as voltages applied to gate control electrodes.

EFFECT: electrical doping with additional gate control electrodes, allowing for sharper p-n-transitions than in tunnel transistors with physical doping, an increase in the steepness of the current-voltage characteristics of tunnel transistors and a decrease in their threshold voltage, the possibility of changing the type of channel conductivity for the application of the proposed transistors in CMOS technology of digital integrated circuits, the lack of technological operations associated with doping, the expansion of functional opportunities, increase in the steepness of the subthreshold voltage-current characteristic due to the increase in the number of control electrodes gates and the provision of work in the tunnel transistor mode.

4 cl, 3 dwg