THREE-ELECTRODE HIGH-FREQUENCY SEMI-CONDUCTING INSTRUMENT Russian patent published in 2009 - IPC H01L45/00 

FIELD: physics.

SUBSTANCE: invention is related to semi-conducting instruments and may be used as switching element (key) or controlled capacitor in integral microcircuit chips that also operate on frequencies higher than 10 GHz. Three-electrode high-frequency semi-conducting instrument comprises semi-conducting epitaxial layer on substrate and two high-frequency track contacts and one control contact installed on it. Contacts in high-frequency track are arranged in the form of Schottky contacts, and control contact is arranged as ohm and located outside the space between contacts in high-frequency track.

EFFECT: simplified design and technology of instrument manufacture, with simultaneous provision of possibility to operate as controlled capacitor.

2 dwg