UHF POWER SWITCH Russian patent published in 2015 - IPC H01P1/15 

FIELD: electricity.

SUBSTANCE: UHF switch is manufactured using gallium nitride where the substrate is sapphire. It contains in succession the following: AlN buffer layer, GaN buffer layer, the second buffer layer from non-alloyed gallium nitride (i-type), solid Al_XGa_1-XN solution, and in the GaN/Al_XGa_1-XN interface of heterostructure the high density two-dimensional electronic gas is formed which is used as the lower coating of the capacitor, above the solid solution Al_XGa_1-XN the chemically steady smoothing layer of gallium nitride is provisioned above which the dielectric containing a layer of hafnium dioxide is applied. Above dielectric the metal strip-shaped electrodes are located which form the upper coating of the capacitor, meanwhile the switch contains two capacitors forming double HF-keys.

EFFECT: decrease of thermal resistance of power switches, increase of level of allowable input power, increase of switching speed, improvement of reliability of devices, level of radiation stability and decrease of gate current leakage and degradation level.

2 cl, 1 dwg