THREE-ELECTRODE SEMICONDUCTOR DEVICE Russian patent published in 2018 - IPC H01L45/00 

FIELD: electricity.

SUBSTANCE: use: to create ultra-high and extremely high frequency monolithic integrated circuits. Essence of the invention consists in that the three-electrode semiconductor device contains two Schottky contacts of the high-frequency section placed on it and one control electrode forming an ohmic contact and located outside the space between contacts in the high-frequency section, Schottky contacts of the high-frequency section are made in the form of a counter-pin system of metallization and are formed to the upper, active layer of the semiconductor structure, and the control electrode is formed to the high-alloy layer of the semiconductor structure, which is located behind the active layer of the semiconductor structure.

EFFECT: technical result: providing the possibility of an increase in the transmission coefficient of frequency converters, reducing the phase noise of generators and increasing the selectivity of electrically tunable filters of ultra-high and extremely high frequency ranges.

1 cl, 2 dwg