PSEUDOMORPHIC SHF SWITCH Russian patent published in 2016 - IPC H01P1/00 

FIELD: electricity.

SUBSTANCE: super-high frequency switch includes a substrate from sapphire, on which the following components are arranged in series: AlN buffer layer, a buffer layer from GaN, a buffer layer from non-doped GaN of i conductivity type, a two-dimensional electron gas of high density, which serves as the lower armature of a capacitor, a smoothing layer from gallium nitride, above which a dielectric layer from hafnium dioxide is applied, metal electrodes of a strip shape, which form the upper armature of the capacitor, and two capacitors forming double HF keys. On the buffer layer from non-doped GaN of i conductivity type the following components are arranged in series: a superlattice from Al_XGa_1-XN/GaN, a buffer layer from GaN, a heavily doped layer of n conductivity type from Al_XGa_1-XN, a spacer from Al_XGa_1-XN, a smoothing layer, a channel from In_XGa_1-XN, an additional smoothing layer from GaN, a dielectric layer from hafnium dioxide and an additional dielectric layer. The switch has minimum number of deep DX electron traps, and the channel is elastically stressed and pseudomorphic and has InGa concentration of 15-25%, and the two-dimensional electron gas is formed between the channel and the layer from Al_XGa_1-XN.

EFFECT: improved reliability of the device by reduction of influence of DX centres, increase of density of electrons and elimination of degradation in a heterostructure.

4 cl, 1 tbl, 2 dwg