PSEUDOMORPHIC SHF SWITCH Russian patent published in 2016 - IPC H01P1/00 

Abstract RU 2574809 C2

FIELD: electricity.

SUBSTANCE: super-high frequency switch includes a substrate from sapphire, on which the following components are arranged in series: AlN buffer layer, a buffer layer from GaN, a buffer layer from non-doped GaN of i conductivity type, a two-dimensional electron gas of high density, which serves as the lower armature of a capacitor, a smoothing layer from gallium nitride, above which a dielectric layer from hafnium dioxide is applied, metal electrodes of a strip shape, which form the upper armature of the capacitor, and two capacitors forming double HF keys. On the buffer layer from non-doped GaN of i conductivity type the following components are arranged in series: a superlattice from AlXGa1-XN/GaN, a buffer layer from GaN, a heavily doped layer of n conductivity type from AlXGa1-XN, a spacer from AlXGa1-XN, a smoothing layer, a channel from InXGa1-XN, an additional smoothing layer from GaN, a dielectric layer from hafnium dioxide and an additional dielectric layer. The switch has minimum number of deep DX electron traps, and the channel is elastically stressed and pseudomorphic and has InGa concentration of 15-25%, and the two-dimensional electron gas is formed between the channel and the layer from AlXGa1-XN.

EFFECT: improved reliability of the device by reduction of influence of DX centres, increase of density of electrons and elimination of degradation in a heterostructure.

4 cl, 1 tbl, 2 dwg

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RU 2 574 809 C2

Authors

Avetisjan Grachik Khachaturovich

Adonin Aleksej Sergeevich

Kolkovskij Jurij Vladimirovich

Minnebaev Vadim Minkhatovich

Dates

2016-02-10Published

2014-06-09Filed