FIELD: electricity.
SUBSTANCE: invention relates to a p-type oxide semiconductor, p-type oxide semiconductor composition, p-type oxide semiconductor manufacturing method, semiconductor element, display element, image display device, and image information display system. P-type oxide semiconductor contains a metal oxide containing thallium (Tl), where the metal oxide has been hole doped at that metal oxide does not contain a Cu element.
EFFECT: invention provides p-type oxide semiconductor that has electrical conductivity that make it useful as the active layer of the semiconductor element.
14 cl, 13 dwg, 2 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| P-TYPE OXIDE, PRODUCING P-TYPE OXIDE COMPOSITION, METHOD OF PRODUCING P-TYPE OXIDE, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, IMAGE REPRODUCING APPARATUS AND SYSTEM | 2012 |
|
RU2556102C2 |
| FIELD TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE AND SYSTEM | 2017 |
|
RU2702802C1 |
| FIELD TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE AND SYSTEM | 2014 |
|
RU2630708C1 |
| FIELD-EFFECT TRANSISTOR AND METHOD OF MANUFACTURING A FIELD-EFFECT TRANSISTOR | 2014 |
|
RU2631405C2 |
| FIELD-EFFECT TRANSISTOR, METHOD OF ITS MANUFACTURING, DISPLAY ELEMENT, DISPLAY DEVICE AND SYSTEM | 2017 |
|
RU2692401C1 |
| FIELD-EFFECT TRANSISTOR USING OXIDE FILM TO TRANSMIT INFORMATION AND PREPARATION METHOD THEREOF | 2007 |
|
RU2400865C2 |
| AMORPHOUS OXIDE AND FIELD-EFFECT TRANSISTOR USING SAID OXIDE | 2008 |
|
RU2399989C2 |
| COATING LIQUID FOR FORMING THIN METAL OXIDE FILM, THIN METAL OXIDE FILM, FIELD-EFFECT TRANSISTOR AND METHOD OF MAKING FIELD-EFFECT TRANSISTOR | 2011 |
|
RU2546725C2 |
| AMORPHOUS OXIDE AND FIELD TRANSISTOR USING IT | 2008 |
|
RU2402106C2 |
| ACTIVE FIELD SEMICONDUCTOR OR OPTOELECTRONIC DEVICE WITH NON-VOLATILE MEMORY AND METHOD FOR MANUFACTURE OF SUCH DEVICE | 2009 |
|
RU2498461C2 |
