FIELD TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE AND SYSTEM Russian patent published in 2019 - IPC H01L29/786 G09F9/30 

FIELD: physics.

SUBSTANCE: invention relates to field-effect transistors and image display devices. Field transistor includes a gate electrode, a source electrode and a drain electrode, an active layer which is formed between the source electrode and the drain electrode, and insulating layer of gate, which is formed between gate electrode and active layer, active layer includes at least two types of oxide semiconductor layers, including layer A and layer B, wherein active layer includes three or more oxide semiconductor layers, including two or more layers A, and wherein active layer is multilayer structure of ABA from three layers, which represent layer A, layer B and layer A, arranged one above the other in this order, one of layers A is in contact with insulating layer of gate, and other of layers A is in contact with source electrode and drain electrode.

EFFECT: invention discloses a field transistor, a display element, an image display device and a system.

18 cl, 13 dwg, 2 tbl