FIELD-EFFECT TRANSISTOR AND METHOD OF MANUFACTURING A FIELD-EFFECT TRANSISTOR Russian patent published in 2017 - IPC H01L21/336 H01L21/288 H01L29/786 H01L27/146 

FIELD: electricity.

SUBSTANCE: field effect transistor is provided; it comprises a gate electrode for applying a gate voltage, a source electrode, and a drain electrode, both of which are designed to output an electric current, an active layer formed of an n-type oxide semiconductor provided in contact with the source electrode and the drain electrode, and an insulating shutter layer provided between the gate electrode and the active layer. Work function of the electrode and a drain electrode discharge is 4.90 EV or more, and the concentration of charge carriers electrons-oxide n-type semiconductor is 4.0×10¹⁷ cm^-3 or more.

EFFECT: getting field-effect transistor, the source and drain electrodes which have a high resistance to the process of heat treatment and processing in oxidizing atmosphere and have a low resistivity, the transistor does not require a buffer layer.

15 cl, 24 dwg, 19 tbl