P-TYPE OXIDE, PRODUCING P-TYPE OXIDE COMPOSITION, METHOD OF PRODUCING P-TYPE OXIDE, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, IMAGE REPRODUCING APPARATUS AND SYSTEM Russian patent published in 2015 - IPC C01G3/00 G09G3/30 G09G3/36 H01L29/24 H01L29/786 H01L29/812 H01L29/868 H01L51/50 H01L21/338 

FIELD: chemistry.

SUBSTANCE: invention relates to a p-type oxide, a p-type oxide composition, a method of producing a p-type oxide, a semiconductor device, an image reproducing apparatus and a system. The p-type oxide is an amorphous compound and has the following compositional formula: xAO∙yCu₂O, where x denotes the molar fraction of AO and y denotes the molar fraction of Cu₂O, x and y satisfy the following conditions: 0≤x<100 and x+y=100 and A is anyone of Mg, Ca, Sr and Ba or a mixture containing at least two elements selected from a group consisting of Mg, Ca, Sr and Ba.

EFFECT: p-type oxide is produced at a relatively low temperature and in real conditions and can exhibit excellent properties, ie sufficient specific conductivity.

11 cl, 36 dwg, 8 tbl, 52 ex