AMORPHOUS OXIDE AND FIELD TRANSISTOR USING IT Russian patent published in 2010 - IPC H01L29/786 

FIELD: electricity.

SUBSTANCE: amorphous oxide the composition of which changes in direction of the thickness of layer contains the compound the composition of crystal state of which is presented with formula In_2-XM3_XO₃(Zn_1-YM2_YO)_m , where M2 - element of group II with atomic number which is less than that of Zn (for example Mg or Ca), M3 - element of group III with atomic number which is less than that of In (for example B, Al, Ga or Y), x is within the range of 0 to 2, y is within the range of 0 to 1 and m is 0 or natural number which his less than 6, and at that, amorphous oxide has concentration of electron carriers of not less than 10¹²/cm³ and less than 10¹⁸/cm³ and has electron mobility which increases with increase of concentration of electron carriers.

EFFECT: amorphous oxide operates as semi-conductor to be used in active layer of transistor.

7 cl, 10 dwg