METHOD OF COMPOSITION STRUCTURE FORMING Russian patent published in 2009 - IPC H01L21/263 

FIELD: electronic engineering.

SUBSTANCE: invention relates to methods of composition structure forming by changing substance properties in primary blank as per preset pattern; it can be used in microelectronics while making integral circuits and information storage facilities for different applications. Method of composition structure forming includes simultaneous impact on selected sections of basic substance by two streams of accelerated particles. The first stream consists of atoms or hydrogen ions with energy leading to replacement of selected atoms in basic substance by atoms of the second stream of particles or to attachment of the second stream to atoms of basic substance in layer with thickness corresponding to projective path length of accelerated hydrogen ions or atoms. Thereat chemical affinity of replacing atoms should be closer to atoms remaining in basic substance than of replaced atoms and chemical affinity of atoms attached to basic substance atoms should be closer than of hydrogen atoms.

EFFECT: extension of list of two- and polyatomic chemical compounds used as working coating and list of composition structures with different chemical and physical properties.

3 cl, 4 tbl