PRODUCTION OF POROUS SILICON WITH STABLE PHOTO LUMINESCENCE Russian patent published in 2015 - IPC H01L33/02 B82B3/00 

Abstract RU 2568954 C1

FIELD: physics.

SUBSTANCE: in compliance with this invention, porous silicon with stable photo luminescence is produced by anode electrochemical etching of monocrystalline silicon substrate in electrolyte. This electrolyte consists of hydrofluoric acid, ethanol and water solution of potassium permanganate at illumination of substrate and in darkness.

EFFECT: production of porous silicon films with stable spectra of photo luminescence.

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RU 2 568 954 C1

Authors

Mel'Nik Nikolaj Nikolaevich

Tregulov Vadim Viktorovich

Dates

2015-11-20Published

2014-06-03Filed