THREE-DIMENSIONALLY STRUCTURED SEMICONDUCTOR SUBSTRATE FOR FIELD-EMISSION CATHODE, METHOD FOR ITS OBTAINING, AND FIELD-EMISSION CATHODE Russian patent published in 2014 - IPC H01J1/30 H01J9/02 H01L21/28 

FIELD: electricity.

SUBSTANCE: proposed invention relates to electrical engineering, and namely to a method for obtaining a three-dimensionally structured semiconductor substrate for a field-emission cathode, and it can be used in different electronic devices: SHF, X-ray tubes, light sources, ion beam charge compensators, etc. Creation of a three-dimensionally structured semiconductor substrate, onto which an emitting film of field-emission cathodes is applied in the form of a microacicular quasi-regular cellular-spiking structure with an aspect ratio of at least 2 (the ratio of height of spikes to their height), allows improving emission performance of cathode, which is the technical result of the proposed invention. A semiconductor substrate for formation of the required microacicular structure on it is subject to photoelectrochemical etching in aqueous or nonaqueous electrolyte, thus changing modes of etching and illumination intensity. Besides, the invention proposes a structured semiconductor substrate for a field-emission cathode from crystalline silicon of p-type with conductivity of 1 to 8 Ohm*cm and a field-emission cathode itself with such substrate, which has increased emission characteristics.

EFFECT: obtaining a three-dimensionally structured semiconductor substrate for a field-emission cathode.

6 cl, 5 dwg