FIELD: technology for production of quantum size structures on basis of amorphous silicon nano-clusters, built into dielectric matrix, by means of decomposition of silicon containing gas mixture, possible use in solid body electronics.
SUBSTANCE: method for producing quantum size structures on basis of amorphous silicon nano-clusters, built into dielectric matrix, is realized by decomposing a mixture of mono-silane and source of nitrogen in plasma of glow discharge with generation of reaction products and sedimentation from them of quantum size structures based on amorphous silicon nano-clusters. During decomposition and sedimentation, plasma of glow discharge is used with frequency of 45-65 kHz, and as nitrogen source ammonia is used.
EFFECT: increased speed of growth of quantum sized structures on basis of silicon nano-clusters, built into dielectric matrix, while preserving their tool qualities.
1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR FORMING AN ORDERED ARRAY OF SILICON NANOCRYSTALS OR NANOCLUSTERS IN A DIELECTRIC MATRIX | 2017 |
|
RU2692406C2 |
| METHOD FOR PRODUCTING THIN FILMS OF AMORPHOUS HYDROGENATED SILICON | 1993 |
|
RU2061281C1 |
| METHOD FOR PRODUCING AMORPHOUS HYDROGENATED SILICON | 2000 |
|
RU2168795C1 |
| STRUCTURE OF DIELECTRIC LAYER FOR MIS STRUCTURES HAVING CONDUCTIVITY SWITCHING EFFECT | 2013 |
|
RU2563553C2 |
| METHOD FOR FORMATION OF DIELECTRIC LAYER WITH CONDUCTIVITY SWITCHING EFFECT | 2010 |
|
RU2449416C1 |
| METHOD OF PRODUCTION OF DIELECTRIC LAYER OF MIS STRUCTURES HAVING EFFECT OF CONDUCTIVITY SWITCHING | 2012 |
|
RU2529442C2 |
| LOW-TEMPERATURE METHOD OF FORMING GALLIUM PHOSPHIDE SEMICONDUCTOR LAYERS AND SOLID SOLUTIONS BASED ON IT SILICON SUBSTRATES | 2016 |
|
RU2690861C2 |
| METHOD OF PRODUCING SILICON NITRIDE FILM | 0 |
|
SU1718302A1 |
| METHOD OF PRODUCING AMORPHOUS SILICON FILMS CONTAINING NANOCRYSTALLINE INCLUSIONS | 2012 |
|
RU2536775C2 |
| METHOD FOR PRODUCING ACTIVE STRUCTURE OF NON-VOLATILE RESISTIVE MEMORY ELEMENT | 2020 |
|
RU2749028C1 |
