SOLAR CELL BUILT AROUND p-TYPE HETEROSTRUCTURE OF AMORPHOUS AND NANOCRYSTALLINE SILICON NITRIDE - SILICON Russian patent published in 2015 - IPC H01L31/06 B82B1/00 

Abstract RU 2568421 C1

FIELD: physics.

SUBSTANCE: single junction solar cell comprises p-silicon substrate of p-type Si(100) pretreated HF acid. Substrate top surface is provided with the ply of 4-5 nm deep n-type film of amorphous silicon nitride mixed with silicon nitride of nanocrystalline structure applied by magnetron sputtering in argon from solid-state Si3N4 target. Electric contacts are produced by magnetron sputtering. Note here that contacts on element top side are made of Ag and shaped to a comb. Note also that rear electric contact on Si(100) substrate back is made of Ag or Cu.

EFFECT: higher efficiency without application of whatever extra plies and solar power concentrators.

9 dwg

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RU 2 568 421 C1

Authors

Zakhvalinskij Vasilij Sergeevich

Pilyuk Evgenij Aleksandrovich

Guni Rodriges Velaskes

Sherban Dormidont Arkhipovich

Simashkevich Aleksej Vasilevich

Bruk Leonid Izmajlovich

Dates

2015-11-20Published

2014-07-25Filed