METHOD OF IMPREGNATION WITH SILICON OF HOLLOW ARTICLES FROM POROUS MATERIAL CONTAINING SILICON CARBIDE AND DEVICE FOR ITS IMPLEMENTATION Russian patent published in 2017 - IPC C04B41/88 C04B35/565 C04B35/65 

FIELD: metallurgy.

SUBSTANCE: invention relates to powder metallurgy, in particular, to production of ceramic refractory articles based on silicon carbide used in semiconductor technology, nuclear power engineering, for example, in production of radioactive waste storage packages. Method involves bringing the article into contact with molten silicon using an element with capillary structure, heating the silicon up to 1,430–1,700 °C and the article up to 1,260–1,400 °C, maintaining at the said temperatures and cooling at the axial temperature gradient in the article of 25–60 °C⋅m^-1. Transportation of silicon to the article is carried out through the element with capillary structure ending with a tip of a quartz tube with a capillary central hole providing flow of the silicon melt at the rate of 15–25 g/min. Device for impregnation with silicon of hollow articles from a porous material containing silicon carbide consists of a sealed chamber, an installed in it resistive heater, a crucible, a feeder made from a material with capillary structure, a support and a screen located between the heater and the article with a height not less than the article height and variable thickness b decreasing through the height of the screen. Feeder ends with a tip of a quartz tube with a capillary central hole with the diameter of 0.5–1.0 mm and located above the impregnated workpiece at the distance of 5–10 mm.

EFFECT: technical result of the invention is higher yield of proper articles and improved quality of their surface.

2 cl, 1 dwg, 1 tbl