METHOD OF DETERMINATION OF POROUS SILICON LAYER THICKNESS Russian patent published in 2009 - IPC H01L21/66 

FIELD: physics.

SUBSTANCE: use: in micro-and optoelectronics for realisation of porous silicon at manufacturing of the various structures possessing ability of photoluminescence and electroluminescence, for example as indicators, and also for manufacturing of a porous basis for the chemical sensors, an antireflection layer for silicon solar cells or an intermediate heterostructure layer. Essence of the invention: oxidising time (τ, seconds) of the porous silicon layer generated by etching is calculated, and thickness (T, micron) of the porous silicon layer is calculated under the formula T= (1.171+1.422 I n ρ)·τ (where ρ specific electrical resistivity of initial monocrystal silicon in the range of 0.5-50 Ohm. cm) for determination of a porous silicon layer thickness obtained by electroetching on a substrate from monocrystal silicon of r-type of conductance with the subsequent oxidising, in the course of realisation of porous silicon at a stage of its oxidising.

EFFECT: simplification of a way of determination of porous silicon layer thickness and increase of accuracy.

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