FIELD: optoelectronics; porous silicon for various photoluminescent and electroluminescent structures, for instance displays.
SUBSTANCE: source single-crystalline silicon is subjected to electrolytic etching in double-electrode cell using electrolyte that has water, ethanol, and hydrofluoric acid. Etching is conducted in two steps. First step includes source silicon etching at DC current with positive potential applied to silicon wafer. Second step involves polarity reversal of voltage applied to etching cell without changing its value. In the process negative potential is applied to silicon wafer and material is etched for 10-60 minutes.
EFFECT: enhanced photoluminescence intensity at reduced photoluminescence wavelength.
1 cl, 1 tbl, 4 ex
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RU2366033C1 |
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RU2553913C1 |
| SENSITIVE ELEMENT OF SENSOR FOR MOLECULAR ANALYSIS | 2012 |
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RU2524453C2 |
