FILM CAPACITOR Russian patent published in 2009 - IPC H01G4/33 

FIELD: physics; conductors.

SUBSTANCE: invention relates to electronic engineering and can be used in production of thin-film hybrid and monolithic integrated circuits when making thin-film capacitors. According to the invention, the film capacitor contains first and second plates made in form of metal films, a dielectric placed between the plates, terminals, which are part of the metal films overhanging end surfaces of the dielectric. There is a second dielectric layer and an intermediate metal plate between dielectric layers, which consists of insulated fragments.

EFFECT: increased yield ratio of capacitors due to reduced effect of defects on the dielectric film.

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