FIELD: radio engineering, communication.
SUBSTANCE: present invention relates to film-type ferroelectric capacitors and can be used in radio electronics as a voltage-controlled capacitive element in automation, communication devices etc. A thin-film ferroelectric capacitor comprises a layer of ferroelectric material sandwiched between lower and upper electrodes, the lower electrode being made of heavily doped monocrystalline silicon, with an ohmic contact made on the lower side of the silicon electrode.
EFFECT: preventing short-circuiting between upper and lower electrodes even when there is a very thin ferroelectric film between the electrodes.
6 dwg
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