METHOD OF MAKING A MIM-CAPACITOR Russian patent published in 2024 - IPC H01L29/68 

FIELD: electricity.

SUBSTANCE: use for production of MIM-capacitors of integrated circuits. Substance of the invention consists in the fact that in the method of manufacturing the MIM-capacitor, after the formation of the lower plate of the capacitor, a layer of silicon oxide is applied, in which a through window is formed to the lower plate of the capacitor, the next layer of silicon oxide is applied, which is etched to the previous layer of silicon oxide, in such a way that near the side surface of the window there are walls, then a layer of dielectric is deposited from the gas phase, second conductive layer is applied, which is etched along the mask, forming the upper plate of the capacitor so that dimensions of the upper plate of the capacitor should be not less than the geometric dimensions of the through window formed in the silicon oxide layer.

EFFECT: providing the possibility of increasing the capacitance value (more than 1 fF/mcm²), increasing integration on the chip.

1 cl, 2 dwg