INTEGRATED CIRCUIT CAPACITOR MANUFACTURING PROCESS Russian patent published in 1996 - IPC

Abstract SU 1817606 A1

FIELD: electronic engineering. SUBSTANCE: semiconductor substrate with already formed components is covered with insulating layer and one or more insulating films etched selectively. Then contact cut is made and bottom plate of capacitor is formed, whereupon one or more insulating films are removed. Bottom plate surface is covered with insulating layer and capacitor plate is formed. EFFECT: improved yield of integrated circuits due to increased value of capacitor and breakdown voltage of insulating layer. 1 dwg

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SU 1 817 606 A1

Authors

Voronin S.I.

Krasnitskij V.Ja.

Dates

1996-10-10—Published

1990-07-02—Filed