METHOD FOR PASSIVATION AND PROTECTION OF RESONATOR END FACES OF SEMICONDUCTOR LASERS Russian patent published in 2011 - IPC H01S5/28 H01L21/02 

FIELD: physics.

SUBSTANCE: when implementing the method, a laser heterostructure is split into lines or crystals of diode lasers in an external atmosphere, while providing cleavage surfaces of the resonator. The line or crystal of the diode laser is then put into a vacuum chamber with oxygen residual pressure not higher than 10^-10 torr, where in order to remove oxides formed, the end faces of the resonator are treated with argon plasma ions with negative potential across specimens of -5 - -10 V. A passivating nitride surface layer is formed on end faces of the resonator using plasma which contains nitrogen with negative potential across specimens of -20 - -30 V. At least one coating layer of Si₃N₄ with thickness of 20-30 nm which blocks oxygen and inter diffusion is sputtered on each treated end face of the resonator with negative potential across the specimens equal to -10 - -15 V. After treatment with nitrogen plasma ions, the treated end faces of the resonator undergo local heating with accelerated electrons of argon plasma ions with positive potential across specimens equal to 20-30 V.

EFFECT: high optical strength of output mirrors and output optical power of semiconductor lasers, prolonged reliability of semiconductor lasers, simple process of making reliable semiconductor lasers.

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