METHOD FOR PRODUCTION OF GaSb-BASED PHOTOCONVERTER Russian patent published in 2016 - IPC H01L31/18 

FIELD: chemistry.

SUBSTANCE: in production of photoconverter according to the invention highly-alloyed contact layer n+-GaSb is grown on the back side of GaSb substrate with n-type of conductivity by method of epitaxy, with buffer layer n-GaSb being grown on the front side. Dielectric film is applied on the front surface of substrate. Windows in dielectric film are made by chemical etching. Surface layer of photoconverter GaSb structure is doped by diffusion of zinc from gas phase in quasi-closed container. P-n-passage is removed on the back side of substrate. Back and front contacts are precipitated and are burned. Structure is separated by etching into separate photoelements and antireflective coating is applied.

EFFECT: invention makes it possible to increase efficiency of GaSb-based photoconverters at high densities of incident radiation.

3 cl, 2 dwg, 1 ex